CHA3660-QQG Datasheet, Amplifier, United Monolithic Semiconductors

CHA3660-QQG Features

  • Amplifier
  • Broadband performances: 21-27.5GHz
  • 19dBm Pout at 1dB compression
  • 25dB gain
  • 30dBm OTOI
  • DC bias: Vd= 4.0V, Id= 180mA
  • 16L-QFN4x4

PDF File Details

Part number:

CHA3660-QQG

Manufacturer:

United Monolithic Semiconductors

File Size:

643.61kb

Download:

📄 Datasheet

Description:

21-27.5ghz medium power amplifier. The CHA3660-QQG is a 3 stage monolithic medium power amplifier, which produces 25dB gain for 19dBm output power. It is designed for a

Datasheet Preview: CHA3660-QQG 📥 Download PDF (643.61kb)
Page 2 of CHA3660-QQG Page 3 of CHA3660-QQG

CHA3660-QQG Application

  • Applications from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes thr

TAGS

CHA3660-QQG
21-27.5GHz
Medium
Power
Amplifier
United Monolithic Semiconductors

📁 Related Datasheet

CHA3664-QAG - 5-21GHz Driver Amplifier (United Monolithic Semiconductors)
UMS A368687A YYWWG CHA3664-QAG UMS A366878A YYWWG 5-21GHz Driver Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CH.

CHA3665-QAG - 5-21GHz Driver Amplifier (United Monolithic Semiconductors)
UMS A368687A YYWWG CHA3665-QAG UMS A366878A YYWWG 5-21GHz Driver Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CH.

CHA3666 - GaAs Monolithic Microwave (United Monolithic Semiconductors)
CHA3666 RoHS COMPLIANT 6-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA3666 is a two-stage self biased wide band monolit.

CHA3666-99F - Low Noise Amplifier (United Monolithic Semiconductors)
CHA3666-99F 6-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description VD1 VD2 The CHA3666-99F is a two-stage self biased wide band mo.

CHA3666-FAA - 6-16GHz Low Noise Amplifier (United Monolithic Semiconductors)
CHA3666-FAA 6-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA3666-FAA is a two-stage self-biased wide band.

CHA3666-FAB - Low Noise Amplifier (United Monolithic Semiconductors)
CHA3666-FAB 6-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA3666-FAB is a two-stage self-biased wide band.

CHA3667A - 7-20GHz Medium Power Amplifier (United Monolithic Semiconductors)
CHA3667a RoHS COMPLIANT 7-20GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description Vd The CHA3667a is a wide band monolithic medium p.

CHA3667aQDG - 7-20GHz Medium Power Amplifier (United Monolithic Semiconductors)
CHA3667aQDG RoHS COMPLIANT 7-20GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA3667aQDG is a wide band mon.

CHA3656-FAB - Low Noise Amplifier (United Monolithic Semiconductors)
CHA3656-FAB 5.8-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD Hermetic package Description The CHA3656-FAB is a two-stage selfbiased w.

CHA3656-QAG - 5.8-17GHz Low Noise Amplifier (United Monolithic Semiconductors)
CHA3656-QAG UMS A366878A YYWWG UMS A368687A YWWG 5.8-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Th.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts