CHA3666 Datasheet - United Monolithic Semiconductors

CHA3666 GaAs Monolithic Microwave

CHA3666 Features

* 24,0

* Broadband performance 6-17GHz

* 1.8dB noise figure

* 26dBm 3rd order intercept point

* 17dBm power at 1dB compression

* 21dB gain 22,0 20,0 18,0 16,0 14,0 12,0 10,0

* Low DC power consumption 8,0 6,0 4,0 2,0 0,0 Main Characteristics 4,00 Temp = +25°C, Vd1=Vd

Datasheet Details

CHA3666

United Monolithic Semiconductors

167.20 KB

Gaas monolithic microwave.

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