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CHA3666 - GaAs Monolithic Microwave

United Monolithic Semiconductors

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Datasheet Details

Part number: CHA3666
Manufacturer: United Monolithic Semiconductors
File Size: 167.20 KB
Datasheet: CHA3666-UnitedMonolithicSemiconductors.pdf
Description: GaAs Monolithic Microwave

CHA3666 Product details

Description

The CHA3666 is a two-stage self biased wide band monolithic low noise amplifier.

Features

24,0.
Broadband performance 6-17GHz.
1.8dB noise figure.
26dBm 3rd order intercept point.
17dBm power at 1dB compression.
21dB gain 22,0 20,0 18,0 16,0 14,0 12,0 10,0.
Low DC power consumption 8,0 6,0 4,0 2,0 0,0 Main Characteristics 4,00 Temp = +25°C, Vd1=Vd2= +4V Pads: P1, N2=GND Gain 6,00 8,00 NF 10,00 12,00 14,00 16,00 18,00 Symbol Parameter NF Noise figure G Gain IP3 3rd order intercept point Min Typ Max Unit 1.8 2 dB 19 21 dB 26 dBm ESD.

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Published: Mar 4, 2016 |