CHA3666-99F - Low Noise Amplifier

United Monolithic Semiconductors

CHA3666-99F Datasheet Preview — Preview of CHA3666-99F PDF

Datasheet Details

Part number	CHA3666-99F
Manufacturer	United Monolithic Semiconductors
File Size	489.05 KB
Description	Low Noise Amplifier
Datasheet	CHA3666-99F-UnitedMonolithicSemiconductors.pdf

CHA3666-99F Product details

Description

VD1 VD2 The CHA3666-99F is a two-stage self biased wide band monolithic low noise amplifier.The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and RFin electron beam gate lithography.RFout UMS P1 P2 N2 Main

Features

Broadband performances: 6-17GHz.
1.8dB noise figure.
26dBm 3rd order intercept point.
17dBm power at 1dB compression.
21dB gain.
Low DC power consumption.
DC bias: Vd=4.0Volt@Id=80mA.
Chip size 1.47x1.47x0.1mm 24,0 22,0 20,0 18,0 Gain 16,0 14,0 12,0 10,0 8,0 6,0 4,0 2,0 NF 0,0 4,00 6,00 8,00 10,00 12,00 14,00 16,00 18,00 Main Electrical Characteristics Tamb. = +25°C, Vd1=Vd2= +4V Pads: P1, N2=GND Symbol Parameter Min Typ Max Unit Fop.

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Published: Jan 26, 2025 |