CHA3666-FAB - Low Noise Amplifier
The CHA3666-FAB is a two-stage self-biased wide band monolithic Low Noise Amplifier.
The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is proposed in leadless surface mount hermetic metal
CHA3666-FAB Features
* Broadband performance 6-16GHz
* 1.8dB typical Noise Figure
* 24dBm 3rd order intercept point
* 16dBm power at 1dB compression
* 21dB gain
* Low DC power consumption
* 6x6mm² metal ceramic hermetic package Linear Gain (dB) 30 25 20 15 10 +25 C +85 C -40 C 5 0
