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CHA3666-FAB

Low Noise Amplifier

CHA3666-FAB Features

* Broadband performance 6-16GHz

* 1.8dB typical Noise Figure

* 24dBm 3rd order intercept point

* 16dBm power at 1dB compression

* 21dB gain

* Low DC power consumption

* 6x6mm² metal ceramic hermetic package Linear Gain (dB) 30 25 20 15 10 +25 C +85 C -40 C 5 0

CHA3666-FAB General Description

The CHA3666-FAB is a two-stage self-biased wide band monolithic Low Noise Amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is proposed in leadless surface mount hermetic metal.

CHA3666-FAB Datasheet (894.76 KB)

Preview of CHA3666-FAB PDF

Datasheet Details

Part number:

CHA3666-FAB

Manufacturer:

United Monolithic Semiconductors

File Size:

894.76 KB

Description:

Low noise amplifier.

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TAGS

CHA3666-FAB Low Noise Amplifier United Monolithic Semiconductors

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