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CHA3666-FAB Low Noise Amplifier

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Description

CHA3666-FAB 6-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD package .
The CHA3666-FAB is a two-stage self-biased wide band monolithic Low Noise Amplifier.

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Features

* Broadband performance 6-16GHz
* 1.8dB typical Noise Figure
* 24dBm 3rd order intercept point
* 16dBm power at 1dB compression
* 21dB gain
* Low DC power consumption
* 6x6mm² metal ceramic hermetic package Linear Gain (dB) 30 25 20 15 10 +25 C +85 C -40 C 5 0

CHA3666-FAB Distributors

📁 Related Datasheet

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📌 All Tags

CHA3666-FAB Low Noise Amplifier United Monolithic Semiconductors
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