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CHA5266-FAB Medium Power Amplifier

CHA5266-FAB Description

CHA5266-FAB 10-16GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD Ceramic Hermetic package .
The CHA5266-FAB is a three stage monolithic GaAs medium power amplifier in leadless surface mount hermetic metal ceramic 6x6mm² package.

CHA5266-FAB Features

* Broadband performances: 10-16GHz
* 24dB Linear Gain
* 26dBm output power @ 1dB comp.
* 35.5dBm output IP3
* DC bias: Vd = 5.0Volt @Idq = 320mA
* 6x6mm² hermetic metal ceramic package VG1 VG2 VG3 Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Freq

CHA5266-FAB Applications

* from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package. RF IN UMS A5266 YYWW ## SSS VD1 VD2 VD3 RF OU

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Medium Power Amplifier United Monolithic Semiconductors
United Monolithic Semiconductors CHA5266-FAB-like datasheet