20N6LG-TO252
VBsemi
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N-channel mosfet.
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20N60 - 20A 600V N-channel Enhancement Mode Power MOSFET
(ROUM)
20N60/F20N60/20N60D 20A 600V N-channel Enhancement Mode Power MOSFET
1 Description
These silicon N-channel Enhanced VDMOSFETs are obtained by the sel.
20N60 - IGBT
(IXYS)
Low VCE(sat) IGBT High speed IGBT
IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A
VCES 600 V 600 V
IC25 40 A 40 A
VCE(sat) 2.5 V 3.0 V
Symbol
Test Conditions.
20N60 - 600V N-CHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD 20N60
20A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 20N60 is an N-channel enhancement mode power MOSFET using .
20N60 - N-Channel MOSFET
(VBsemi)
20N60-VB
20N60-VB Datasheet
N-Channel 650 V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) (Ω) at 25 °C Qg max. (nC) Qgs (.
20N60 - N-Channel MOSFET
(ON Semiconductor)
MOSFET – N-Channel, SuperFET)
600 V, 20 A, 190 mW
FCP20N60, FCPF20N60
Description SuperFET MOSFET is onsemi’s first generation of high voltage
super−j.
20N60A - IGBT
(IXYS)
Low VCE(sat) IGBT High speed IGBT
IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A
VCES 600 V 600 V
IC25 40 A 40 A
VCE(sat) 2.5 V 3.0 V
Symbol
Test Conditions.
20N60A - N-channel MOSFET
(JieJie)
Description
JMP N-channel MOSFET
Features
600V,20A RDS(ON) = 0.3Ω (Typ.) @ VGS = 10V, ID =10A Fast Switching Improved dv/dt Capability 100% .
20N60A4D - HGTG20N60A4D
(Fairchild Semiconductor)
HGTG20N60A4D
Data Sheet February 2009
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG20N60A4D is a MOS gated high voltag.
20N60A4D - N-Channel IGBT
(ON Semiconductor)
SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600 V
HGTG20N60A4D
The HGTG20N60A4D is a MOS gated high voltage switching device bini.
20N60B - IGBT
(IXYS Corporation)
HiPerFASTTM IGBT
IXGA 20N60B IXGP 20N60B
VCES IC25 VCE(sat)typ tfi
= 600 V = 40 A = 1.7 V = 100 ns
Preliminary data sheet
Symbol VCES VCGR VGES VG.
