VBsemi manufacturer logo Part number: 4N06L23 Manufacturer: VBsemi File Size: 221.26 KB Download: 📄 Datasheet Description: N-channel mosfet.
4N0603 Datasheet PDF 4N0603, VBsemi 4N0603-VB TO252 4N0603-VB TO252 Datasheet N-Channel 60 V (D-S) 175 °C MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on.
4N0607 Datasheet PDF 4N0607, VBsemi 4N0607-VB TO220 4N0607-VB TO220 Datasheet N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS RDS(on) VGS = 10 V ID Configuration 60 V 5 m 120 A .
4N0607 Datasheet PDF 4N0607, VBsemi 4N0607-VB TO252 4N0607-VB TO252 Datasheet N-Channel 60 V (D-S) 175 °C MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on.
4N03L02 Datasheet PDF 4N03L02, Infineon OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating .
4N041R1 Datasheet PDF 4N041R1, Infineon IPLU300N04S4-1R1 OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operatin.
4N04R7 Datasheet PDF 4N04R7, Infineon IPLU300N04S4-R7 OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating.
4N04R8 Datasheet PDF 4N04R8, Infineon IPLU300N04S4-R8 OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating.
4N10 Datasheet PDF 4N10, Inchange Semiconductor isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance :.
