Datasheet Specifications
- Part number
- FQB6N15
- Manufacturer
- VBsemi
- File Size
- 190.83 KB
- Datasheet
- FQB6N15-VBsemi.pdf
- Description
- N-Channel MOSFET
Description
FQB6N15-VB FQB6N15-VB Datasheet N-Channel 200 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 0.048 at VGS = 10 V .
Features
* TrenchFET® Power MOSFETApplications
* Isolated DC/DC Converters - Primary-Side Switch D GD S Top View G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C IDFQB6N15 Distributors
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