* TrenchFET® Power MOSFET
* 175 °C Junction Temperature
* Low Thermal Resistance Package
* PWM Optimized for Fast Switching
* Compliant to RoHS Directive 2002/95/EC APPLICATIONS
* Isolated DC/DC Converters - Primary-Side Switch D GD S Top View G S N-
FQB6N15
VBsemi
190.83 KB
N-channel mosfet.
FQB6N15-VB
FQB6N15-VB Datasheet
N-Channel 200 V (D-S) 175 °C MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
200
0.048 at VGS = 10 V
.
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