FQB6N40C Datasheet - Fairchild Semiconductor

FQB6N40C 400V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in.

FQB6N40C Features

* 6 A, 400 V, RDS(on) = 1.0 Ω (Max.) @ VGS = 10 V, ID = 3 A

* Low Gate Charge (Typ. 16nC)

* Low Crss (Typ. 15pF)

* 100% Avalanche Tested D D G S D2-PAK G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD T

FQB6N40C_FairchildSemiconductor.pdf