FQB6N40C 400V N-Channel MOSFET

Fairchild Semiconductor

Description

FQB6N40C * N-Channel QFET® MOSFET FQB6N40C N-Channel QFET® MOSFET 400 V, 6 A, 1.0 Ω November 2013 .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number: FQB6N40C
Manufacturer: Fairchild Semiconductor
File Size: 801.31 KB
Datasheet: FQB6N40C_FairchildSemiconductor.pdf
Description: 400V N-Channel MOSFET

Features

* 6 A, 400 V, RDS(on) = 1.0 Ω (Max. ) @ VGS = 10 V, ID = 3 A
* Low Gate Charge (Typ. 16nC)
* Low Crss (Typ. 15pF)
* 100% Avalanche Tested D D G S D2-PAK G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD T

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FQB6N40C 400V N-Channel MOSFET Fairchild Semiconductor

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