FQB6N60 600V N-Channel MOSFET

Fairchild Semiconductor

Description

FQB6N60 / FQI6N60 April 2000 QFET FQB6N60 / FQI6N60 600V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

📥 Download Datasheet

FQB6N60 Datasheet Preview — Preview of FQB6N60 PDF

Datasheet Specifications

Part number: FQB6N60
Manufacturer: Fairchild Semiconductor
File Size: 547.21 KB
Datasheet: FQB6N60_FairchildSemiconductor.pdf
Description: 600V N-Channel MOSFET

Features

* 6.2A, 600V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S

FQB6N60 Distributors

📁 Related Datasheet

FQB6N15 FQB020ADC-007-M FQB020ADC-007-S FQB020ADC-N07-M FQB020ADC-N07-S FQB10N50CF

📌 All Tags

FQB6N60 600V N-Channel MOSFET Fairchild Semiconductor

Fairchild Semiconductor FQB6N60-like datasheet