Part number:
FQB6N60
Manufacturer:
Fairchild Semiconductor
File Size:
547.21 KB
Description:
600v n-channel mosfet.
Datasheet Details
FQB6N60 Features
* 6.2A, 600V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S
FQB6N60 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.
Datasheet Details
FQB6N60
Fairchild Semiconductor
547.21 KB
600v n-channel mosfet.
📁 Related Datasheet
FQB6N15 N-Channel MOSFET (VBsemi)
FQB6N15 150V N-Channel MOSFET (Fairchild Semiconductor)
FQB6N25 250V N-Channel MOSFET (Fairchild Semiconductor)
FQB6N40 400V N-Channel MOSFET (Fairchild Semiconductor)
FQB6N40C 400V N-Channel MOSFET (Fairchild Semiconductor)
FQB6N45 450V N-Channel MOSFET (Fairchild Semiconductor)
FQB6N50 500V N-Channel MOSFET (Fairchild Semiconductor)
FQB6N70 700V N-Channel MOSFET (Fairchild Semiconductor)
FQB6N80 800V N-Channel MOSFET (Fairchild Semiconductor)
FQB6N90 900V N-Channel MOSFET (Fairchild Semiconductor)
FQB6N60 Distributor
