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FQB6N45 Datasheet - Fairchild Semiconductor

FQB6N45 450V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQB6N45 Features

* 6.2A, 450V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S

FQB6N45_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FQB6N45

Manufacturer:

Fairchild Semiconductor

File Size:

582.12 KB

Description:

450v n-channel mosfet.

FQB6N45 Distributor

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FQB6N45 FQB6N45 450V N-Channel MOSFET Fairchild Semiconductor