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FQB10N50CF

N-Channel MOSFET

FQB10N50CF Features

* 10 A, 500 V, RDS(on) = 610 mΩ (Max.) @ VGS = 10 V, ID = 5 A

* Low gate charge ( Typ. 45 nC)

* Low Crss ( Typ. 17.5 pF)

* 100% avalanche tested

* Fast recovery body diode Description This N-Channel enhancement mode power MOSFET is produced using ON Semicondu

FQB10N50CF General Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strengt.

FQB10N50CF Datasheet (879.96 KB)

Preview of FQB10N50CF PDF

Datasheet Details

Part number:

FQB10N50CF

Manufacturer:

ON Semiconductor ↗

File Size:

879.96 KB

Description:

N-channel mosfet.

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FQB10N50CF N-Channel MOSFET ON Semiconductor

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