FQB10N20L - 200V LOGIC N-Channel MOSFET
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the
FQB10N20L Features
* 10A, 200V, RDS(on) = 0.36Ω @VGS = 10 V Low gate charge ( typical 13 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct operation from logic
