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FQB22P10TM-F085 - P-Channel MOSFET

FQB22P10TM-F085 Description

FQB22P10TM-F085 100V P-Channel MOSFET FQB22P10TM-F085 100V P-Channel MOSFET General .
These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor proprietary, planar stripe, DMOS technology.

FQB22P10TM-F085 Features

* -22A, -100V, RDS(on) = 0.125Ω @VGS = -10 V
* Low gate charge ( typical 40 nC)
* Low Crss ( typical 160 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating
* Qualified to

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P-Channel MOSFET ON Semiconductor
ON Semiconductor FQB22P10TM-F085-like datasheet

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