FQB22P10TM-F085 - P-Channel MOSFET
These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pu
FQB22P10TM-F085 Features
* -22A, -100V, RDS(on) = 0.125Ω @VGS = -10 V
* Low gate charge ( typical 40 nC)
* Low Crss ( typical 160 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating
* Qualified to
