FQB22P10TM-F085 Datasheet - ON Semiconductor

FQB22P10TM-F085 P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pu.

FQB22P10TM-F085 Features

* -22A, -100V, RDS(on) = 0.125Ω @VGS = -10 V

* Low gate charge ( typical 40 nC)

* Low Crss ( typical 160 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability

* 175°C maximum junction temperature rating

* Qualified to

FQB22P10TM-F085-ONSemiconductor.pdf