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FQB22P10TM-F085 - P-Channel MOSFET

Datasheet Summary

Description

These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor proprietary, planar stripe, DMOS technology.

Features

  • -22A, -100V, RDS(on) = 0.125Ω @VGS = -10 V.
  • Low gate charge ( typical 40 nC).
  • Low Crss ( typical 160 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • 175°C maximum junction temperature rating.
  • Qualified to AEC Q101.
  • RoHS Compliant D D G S D2-PAK FQB Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-S.

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FQB22P10TM-F085 100V P-Channel MOSFET FQB22P10TM-F085 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. Features • -22A, -100V, RDS(on) = 0.
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