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FQB34N20 - N-Channel MOSFET

Datasheet Summary

Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 31 A, 200 V, RDS(on) = 75 mΩ (Max. ) @ VGS = 10 V, ID = 15.5 A.
  • Low Gate Charge (Typ. 60 nC).
  • Low Crss (Typ. 55 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant D D G S D2-PAK G              S  + 6 6 + ; 6 ; !$ 8         +             2-)/74   2-(.
  • 74 8     :  +.

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Datasheet preview – FQB34N20

Datasheet Details

Part number FQB34N20
Manufacturer ON Semiconductor
File Size 899.76 KB
Description N-Channel MOSFET
Datasheet download datasheet FQB34N20 Datasheet
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FQB34N20 — N-Channel QFET® MOSFET FQB34N20 N-Channel QFET® MOSFET 200 V, 31 A, 75 mΩ Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 31 A, 200 V, RDS(on) = 75 mΩ (Max.) @ VGS = 10 V, ID = 15.5 A • Low Gate Charge (Typ. 60 nC) • Low Crss (Typ.
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