FQB34N20 Datasheet - ON Semiconductor

FQB34N20 N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strengt.

FQB34N20 Features

* 31 A, 200 V, RDS(on) = 75 mΩ (Max.) @ VGS = 10 V, ID = 15.5 A

* Low Gate Charge (Typ. 60 nC)

* Low Crss (Typ. 55 pF)

* 100% Avalanche Tested

* RoHS Compliant D D G S D2-PAK G S +

FQB34N20-ONSemiconductor.pdf