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FQB5N90 - N-Channel MOSFET

Datasheet Summary

Description

ID = 2.7 A This N-Channel enhancement mode power MOSFET is

Low Gate Charge (Typ.

produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

Low Crss (Typ.

Features

  • 5.4 A, 900 V, RDS(on) = 2.3 Ω (Max. ) @ VGS = 10 V,.

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Datasheet preview – FQB5N90

Datasheet Details

Part number FQB5N90
Manufacturer ON Semiconductor
File Size 869.07 KB
Description N-Channel MOSFET
Datasheet download datasheet FQB5N90 Datasheet
Additional preview pages of the FQB5N90 datasheet.

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Full PDF Text Transcription

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FQB5N90 — N-Channel QFET® MOSFET FQB5N90 N-Channel QFET® MOSFET 900 V, 5.4 A, 2.3 Ω Features • 5.4 A, 900 V, RDS(on) = 2.3 Ω (Max.) @ VGS = 10 V, Description ID = 2.7 A This N-Channel enhancement mode power MOSFET is • Low Gate Charge (Typ. 31 nC) produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET • Low Crss (Typ. 13 pF) technology has been especially tailored to reduce on-state • 100% Avalanche Tested resistance, and to provide superior switching performance and high avalanche energy strength. These devices are • RoHS Compliant suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D D G S D2-PAK G Absolute Maximum Ratings TC = 25°C unless otherwise noted.
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