FQB5N90

N-Channel MOSFET

ON Semiconductor

FQB5N90 Features

* 5.4 A, 900 V, RDS(on) = 2.3 Ω (Max.) @ VGS = 10 V, Description ID = 2.7 A This N-Channel enhancement mode power MOSFET is

* Low Gate Charge (Typ. 31 nC) produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET

* Low Crss (

FQB5N90 General Description

ID = 2.7 A This N-Channel enhancement mode power MOSFET is

* Low Gate Charge (Typ. 31 nC) produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET

* Low Crss (Typ. 13 pF) technology has been especially tailored to reduce on-state

FQB5N90 Datasheet (869.07 KB)