FQB7N60

N-Channel MOSFET

ON Semiconductor

FQB7N60 Features

* 7.4 A, 600 V, RDS(on) = 1.0 W (Max.) @ VGS = 10 V, ID = 3.7 A

* Low Gate Charge (Typ. 29 nC)

* Low Crss (Typ. 16 pF)

* 100% Avalanche Tested

* This Device is Pb

* Free, Halide Free and is RoHS Compliant MAXIMUM RATINGS (TC = 25°C, unless otherwise not

FQB7N60 General Description

This N

*Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on

*state resistance, and to provide superior switching performance and high avalanche energy s.

FQB7N60 Datasheet (398.68 KB)