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FQB7N60 N-Channel MOSFET

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Description

MOSFET * N-Channel, QFET 600 V, 7.4 A, 1.0 W FQB7N60, FQI7N60 .
This N. Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology.

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Features

* 7.4 A, 600 V, RDS(on) = 1.0 W (Max. ) @ VGS = 10 V, ID = 3.7 A
* Low Gate Charge (Typ. 29 nC)
* Low Crss (Typ. 16 pF)
* 100% Avalanche Tested
* This Device is Pb
* Free, Halide Free and is RoHS Compliant MAXIMUM RATINGS (TC = 25°C, unless otherwise not

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