FQB34P10TM_F085 Datasheet (Fairchild Semiconductor)

FQB34P10TM_F085, 100V P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i

FQB34P10TM_F085 Features

* -33.5A, -100V, RDS(on) = 0.06Ω @VGS = -10 V

* Low gate charge ( typical 85 nC)

* Low Crss ( typical 170 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability

* 175°C maximum junction temperature rating

* Qualified t