FQB34P10TM_F085 100V P-Channel MOSFET

Fairchild Semiconductor

Description

FQB34P10TM_F085 100V P-Channel MOSFET FQB34P10TM_F085 100V P-Channel MOSFET March 2012 QFET TM General .
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number: FQB34P10TM_F085
Manufacturer: Fairchild Semiconductor
File Size: 1.12 MB
Datasheet: FQB34P10TM_F085-FairchildSemiconductor.pdf
Description: 100V P-Channel MOSFET

Features

* -33.5A, -100V, RDS(on) = 0.06Ω @VGS = -10 V
* Low gate charge ( typical 85 nC)
* Low Crss ( typical 170 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating
* Qualified t

FQB34P10TM_F085 Distributors

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FQB34P10TM_F085 100V P-Channel MOSFET Fairchild Semiconductor

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