FQB200N04 N-Channel Enhancement Mode Power MOSFET

Description

FQB200N04 N-Channel Enhancement Mode Power MOSFET .
The FQB200N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: FQB200N04
Manufacturer: OuCan
File Size: 290.78 KB
Datasheet: FQB200N04-OuCan.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 40V,ID =200A RDS(ON) < 2.6mΩ @ VGS=10V (Typ:2.0mΩ)
* Special process technology for high ESD capability
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent packa

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FQB200N04 N-Channel Enhancement Mode Power MOSFET OuCan

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