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FQB22P10TM_F085 Datasheet - Fairchild Semiconductor

FQB22P10TM_F085 - 100V P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i

FQB22P10TM_F085 Features

* -22A, -100V, RDS(on) = 0.125Ω @VGS = -10 V Low gate charge ( typical 40 nC) Low Crss ( typical 160 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating Qu

FQB22P10TM_F085_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FQB22P10TM_F085

Manufacturer:

Fairchild Semiconductor

File Size:

693.77 KB

Description:

100v p-channel mosfet.

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