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FQB22P10TM_F085 100V P-Channel MOSFET

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Description

FQB22P10TM_F085 100V P-Channel MOSFET February 2009 QFET ® FQB22P10TM_F085 100V P-Channel MOSFET General .
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Features

* -22A, -100V, RDS(on) = 0.125Ω @VGS = -10 V Low gate charge ( typical 40 nC) Low Crss ( typical 160 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating Qu

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FQB22P10TM_F085 100V P-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FQB22P10TM_F085-like datasheet
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