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FQB25N33TM_F085 Datasheet - Fairchild Semiconductor

FQB25N33TM_F085 330V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Farichild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimized on-state resistance, provide superior switching performance, and withstand high energy pulse .

FQB25N33TM_F085 Features

* 25A, 330V, RDS(on) = 0.23Ω @VGS = 10V

* Low gate charge (typical 58nC)

* Low Crss (typical 40pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability

* Qualified to AEC Q101

* RoHS Compliant April 2010 tm General Desc

FQB25N33TM_F085-FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FQB25N33TM_F085

Manufacturer:

Fairchild Semiconductor

File Size:

1.10 MB

Description:

330v n-channel mosfet.

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FQB25N33TM_F085 FQB25N33TM_F085 330V N-Channel MOSFET Fairchild Semiconductor

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