FQB25N33TM_F085 Datasheet (Fairchild Semiconductor)

FQB25N33TM_F085, 330V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Farichild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimized on-state resistance, provide superior switching performance, and withstand high energy pulse

FQB25N33TM_F085 Features

* 25A, 330V, RDS(on) = 0.23Ω @VGS = 10V

* Low gate charge (typical 58nC)

* Low Crss (typical 40pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability

* Qualified to AEC Q101

* RoHS Compliant April 2010 tm General Desc