FQB34P10 Datasheet - Fairchild Semiconductor

FQB34P10, MOSFET

FQB34P10 * P-Channel QFET® MOSFET FQB34P10 P-Channel QFET® MOSFET 100 V, -33.5 A, 60 mΩ March 2016 .
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

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Datasheet Details

Part number:

FQB34P10

Manufacturer:

Fairchild Semiconductor

File Size:

1.83 MB

Description:

MOSFET

Features

* -33.5 A, -100 V, RDS(on) = 60 mΩ (Max. ) @ VGS = .10 V, ID = -16.75 A
* Low Gate Charge (Typ. 85 nC)
* Low Crss (Typ. 170 pF)
* 100% Avalanche Tested
* 175°C Maximum Junction Temperature Rating S G S D D2-PAK G D Absolute Maximum Ratings TC = 25°C unles

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FQB34P10 MOSFET Fairchild Semiconductor

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