FQB34P10 Datasheet - Fairchild Semiconductor

FQB34P10 MOSFET

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQB34P10 Features

* -33.5 A, -100 V, RDS(on) = 60 mΩ (Max.) @ VGS = .10 V, ID = -16.75 A

* Low Gate Charge (Typ. 85 nC)

* Low Crss (Typ. 170 pF)

* 100% Avalanche Tested

* 175°C Maximum Junction Temperature Rating S G S D D2-PAK G D Absolute Maximum Ratings TC = 25°C unles

FQB34P10-FairchildSemiconductor.pdf