FQB34P10 Datasheet, Mosfet, Fairchild Semiconductor

FQB34P10 Features

• Mosfet
• -33.5 A, -100 V, RDS(on) = 60 mΩ (Max.) @ VGS = .10 V, ID = -16.75 A
• Low Gate Charge (Typ. 85 nC)
• Low Crss (Typ. 170 pF)
• 100% Avalanche Tested

PDF File Details

Part number:

FQB34P10

Manufacturer:

Fairchild Semiconductor

File Size:

1.83MB

Download:

📄 Datasheet

Description:

Mosfet. This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technolog

FQB34P10 Application

• Applications Features
• -33.5 A, -100 V, RDS(on) = 60 mΩ (Max.) @ VGS = .10 V, ID = -16.75 A
• Low Gate Charge (Typ. 85 nC)
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FQB34P10

Fairchild Semiconductor

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