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FQB33N10L Datasheet - Fairchild Semiconductor

FQB33N10L N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQB33N10L Features

* 33 A, 100 V, RDS(on) = 52 mΩ (Max) @VGS = 10 V, ID = 16.5 A

* Low Gate Charge (Typ. 30 nC)

* Low Crss (Typ. 70 pF)

* 100% Avalanche Tested

* 175°C Maximum Junction Temperature Rating D D GS D2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise

FQB33N10L_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FQB33N10L

Manufacturer:

Fairchild Semiconductor

File Size:

905.57 KB

Description:

N-channel mosfet.

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FQB33N10L FQB33N10L N-Channel MOSFET Fairchild Semiconductor

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