FQB33N10L Datasheet (Fairchild Semiconductor)

FQB33N10L, N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy

FQB33N10L Features

* 33 A, 100 V, RDS(on) = 52 mΩ (Max) @VGS = 10 V, ID = 16.5 A

* Low Gate Charge (Typ. 30 nC)

* Low Crss (Typ. 70 pF)

* 100% Avalanche Tested

* 175°C Maximum Junction Temperature Rating D D GS D2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise