FQB11P06 Datasheet, Mosfet, Fairchild Semiconductor

FQB11P06 Features

• Mosfet
• -11.4 A, -60 V, RDS(on) = 175 mΩ (Max.) @ VGS = -10 V, ID = -5.7 A
• Low Gate Charge (Typ. 13 nC)
• Low Crss (Typ. 45 pF)
• 100% Avalanche Tested

PDF File Details

Part number:

FQB11P06

Manufacturer:

Fairchild Semiconductor

File Size:

940.71kb

Download:

📄 Datasheet

Description:

60v p-channel mosfet. This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technolog

FQB11P06 Application

• Applications Features
• -11.4 A, -60 V, RDS(on) = 175 mΩ (Max.) @ VGS = -10 V, ID = -5.7 A
• Low Gate Charge (Typ. 13 nC)

TAGS

FQB11P06

Fairchild Semiconductor

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