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FQB11P06 - 60V P-Channel MOSFET

Datasheet Summary

Description

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • -11.4 A, -60 V, RDS(on) = 175 mΩ (Max. ) @ VGS = -10 V, ID = -5.7 A.
  • Low Gate Charge (Typ. 13 nC).
  • Low Crss (Typ. 45 pF).
  • 100% Avalanche Tested.
  • 175°C Maximum Junction Temperature Rating S D G G S D2-PAK D Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Ga.

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Datasheet Details

Part number FQB11P06
Manufacturer Fairchild Semiconductor
File Size 940.71 KB
Description 60V P-Channel MOSFET
Datasheet download datasheet FQB11P06 Datasheet
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FQB11P06 — P-Channel QFET® MOSFET FQB11P06 P-Channel QFET® MOSFET -60 V, -11.4 A, 175 mΩ November 2013 Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features • -11.4 A, -60 V, RDS(on) = 175 mΩ (Max.) @ VGS = -10 V, ID = -5.7 A • Low Gate Charge (Typ. 13 nC) • Low Crss (Typ.
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