FQB11P06 60V P-Channel MOSFET

Fairchild Semiconductor

Description

FQB11P06 * P-Channel QFET® MOSFET FQB11P06 P-Channel QFET® MOSFET -60 V, -11.4 A, 175 mΩ November 2013 .
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

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Datasheet Specifications

Part number: FQB11P06
Manufacturer: Fairchild Semiconductor
File Size: 940.71 KB
Datasheet: FQB11P06_FairchildSemiconductor.pdf
Description: 60V P-Channel MOSFET

Features

* -11.4 A, -60 V, RDS(on) = 175 mΩ (Max. ) @ VGS = -10 V, ID = -5.7 A
* Low Gate Charge (Typ. 13 nC)
* Low Crss (Typ. 45 pF)
* 100% Avalanche Tested
* 175°C Maximum Junction Temperature Rating S D G G S D2-PAK D Absolute Maximum Ratings TC = 25°C unless o

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FQB11P06 60V P-Channel MOSFET Fairchild Semiconductor

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