FQB11P06 Datasheet - Fairchild Semiconductor

FQB11P06 60V P-Channel MOSFET

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQB11P06 Features

* -11.4 A, -60 V, RDS(on) = 175 mΩ (Max.) @ VGS = -10 V, ID = -5.7 A

* Low Gate Charge (Typ. 13 nC)

* Low Crss (Typ. 45 pF)

* 100% Avalanche Tested

* 175°C Maximum Junction Temperature Rating S D G G S D2-PAK D Absolute Maximum Ratings TC = 25°C unless o

FQB11P06_FairchildSemiconductor.pdf