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FQB10N60C Datasheet - Fairchild Semiconductor

FQB10N60C 600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQB10N60C Features

* 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V Low gate charge ( typical 44 nC) Low Crss ( typical 18 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

* ◀ ▲

* G S D2-PAK FQB Series I2-PAK G D S FQI Seri

FQB10N60C_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FQB10N60C

Manufacturer:

Fairchild Semiconductor

File Size:

614.17 KB

Description:

600v n-channel mosfet.

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FQB10N60C FQB10N60C 600V N-Channel MOSFET Fairchild Semiconductor

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