FQB6N80

800V N-Channel MOSFET

Fairchild Semiconductor

FQB6N80 Features

* 5.8A, 800V, RDS(on) = 1.95Ω @VGS = 10 V Low gate charge ( typical 31 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! 3 " " 5 D2-PAK FQB Series G D S I2-PAK FQI Series !

FQB6N80 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQB6N80 Datasheet (683.56 KB)

FQB6N80 Datasheet Preview — Preview of FQB6N80 PDF

Datasheet Details

Part number:

FQB6N80

Manufacturer:

Fairchild Semiconductor

File Size:

683.56 KB

Description:

800v n-channel mosfet.

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FQB6N80 800V N-Channel MOSFET Fairchild Semiconductor

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FQB6N80 Features

FQB6N80 General Description

Datasheet Details

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Description:

FQB6N80 Distributor