FQB6N80 Datasheet, Mosfet, Fairchild Semiconductor

FQB6N80 Features

• Mosfet
• 5.8A, 800V, RDS(on) = 1.95Ω @VGS = 10 V Low gate charge ( typical 31 nC) Low Crss ( typical 14 pF) Fast switching 100% avalan

PDF File Details

Part number:

FQB6N80

Manufacturer:

Fairchild Semiconductor

File Size:

683.56kb

Download:

📄 Datasheet

Description:

800v n-channel mosfet. These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS techn

TAGS

FQB6N80

Fairchild Semiconductor

📁 Related Datasheet

FQB6N15 - N-Channel MOSFET (VBsemi)
FQB6N15-VB FQB6N15-VB Datasheet N-Channel 200 V (D-S) 175 °C MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 0.048 at VGS = 10 V .

FQB6N15 - 150V N-Channel MOSFET (Fairchild Semiconductor)

  
 

  
 
    
    
              .

FQB6N25 - 250V N-Channel MOSFET (Fairchild Semiconductor)

  
 

  
 
    
    
              .

FQB6N40 - 400V N-Channel MOSFET (Fairchild Semiconductor)

  
 
 
  
 
    
    
             .

FQB6N40C - 400V N-Channel MOSFET (Fairchild Semiconductor)
FQB6N40C — N-Channel QFET® MOSFET FQB6N40C N-Channel QFET® MOSFET 400 V, 6 A, 1.0 Ω November 2013 Description These N-Channel enhancement mode powe.

FQB6N45 - 450V N-Channel MOSFET (Fairchild Semiconductor)
FQB6N45 / FQI6N45 January 2001 QFET FQB6N45 / FQI6N45 450V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect .

FQB6N50 - 500V N-Channel MOSFET (Fairchild Semiconductor)

  
 
 
  
 
    
    
             .

FQB6N60 - 600V N-Channel MOSFET (Fairchild Semiconductor)
FQB6N60 / FQI6N60 April 2000 QFET FQB6N60 / FQI6N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect tr.

FQB6N70 - 700V N-Channel MOSFET (Fairchild Semiconductor)

  
 
 
  
 
    
    
             .

FQB6N90 - 900V N-Channel MOSFET (Fairchild Semiconductor)
FQB6N90 / FQI6N90 December 2000 QFET FQB6N90 / FQI6N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect.