Part number:
HY3410P
Manufacturer:
VBsemi
File Size:
259.00 KB
Description:
N-channel 100v mosfet.
Datasheet Details
HY3410P Features
* TrenchFET® Power MOSFET
* 175 °C Maximum Junction Temperature
* Compliant to RoHS Directive 2002/95/EC TO-220AB D GD S G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Volt
Datasheet Details
HY3410P
VBsemi
259.00 KB
N-channel 100v mosfet.
📁 Related Datasheet
HY3410B N-Channel Enhancement Mode MOSFET (HOOYI)
HY3410M N-Channel Enhancement Mode MOSFET (HOOYI)
HY3410MF N-Channel Enhancement Mode MOSFET (HOOYI)
HY3410P N-Channel Enhancement Mode MOSFET (HOOYI)
HY3410PM N-Channel Enhancement Mode MOSFET (HOOYI)
HY3410PS N-Channel Enhancement Mode MOSFET (HOOYI)
HY3403B N-Channel Enhancement Mode MOSFET (HOOYI)
HY3403P N-Channel Enhancement Mode MOSFET (HOOYI)
HY3410P Distributor