* TrenchFET® Power MOSFET
* 175 °C Maximum Junction Temperature
* Compliant to RoHS Directive 2002/95/EC TO-263 G DS Top View D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Sourc
HY3210B
VBsemi
286.11 KB
N-channel 100v mosfet.
HY3210B-VB
HY3210B-VB Datasheet
N-Channel 100-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.010 at VGS = 10 V 100
0.023 at.
📁 Related Datasheet
HY3210B N-Channel Enhancement Mode MOSFET (HOOYI)
HY3210M N-Channel Enhancement Mode MOSFET (HOOYI)
HY3210P N-Channel Enhancement Mode MOSFET (HOOYI)
HY3210PM N-Channel Enhancement Mode MOSFET (HOOYI)
HY3210PS N-Channel Enhancement Mode MOSFET (HOOYI)
HY3215 N-Channel Enhancement Mode MOSFET (HOOYI)
HY3215B N-Channel Enhancement Mode MOSFET (HOOYI)
HY3215M N-Channel Enhancement Mode MOSFET (HOOYI)
HY3215P N-Channel Enhancement Mode MOSFET (HOOYI)
HY3215PM N-Channel Enhancement Mode MOSFET (HOOYI)
