HY3403B - N-Channel Enhancement Mode MOSFET
z 30V/140A RDS(ON)=2.2mΩ(typ.)@VGS = 10V RDS(ON)=2.7mΩ(typ.) @VGS = 4.5V z 100% avalanche tested z Excellent CdV/dt effect decline z Lead- Free Device Available Applications z Switching Application z Power Management for DC/DC N-Channel Enhancement Mode MOSFET Pin Description GDS GDS TO-220FB-3L