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ME16P10 P-Channel MOSFET

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Description

ME16P10-VB ME16P10-VB Datasheet P-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 100 0.100 at VGS = - 10 V 0.1.

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Datasheet Specifications

Part number
ME16P10
Manufacturer
VBsemi
File Size
225.79 KB
Datasheet
ME16P10-VBsemi.pdf
Description
P-Channel MOSFET

Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg and UIS Tested

Applications

* Power Switch
* DC/DC Converters TO-252 S GDS Top View Drain Connected to Tab G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TC =

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