NTD5806NT4G Datasheet - VBsemi

NTD5806NT4G, N-Channel MOSFET

NTD5806NT4G NTD5806NT4G N-Channel 4 www.VBsemi.com 0-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) () 0.013 at VGS = 10 V 0.018 at VGS = 4.5 .

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NTD5806NT4G-VBsemi.pdf

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Datasheet Details

Part number:

NTD5806NT4G

Manufacturer:

VBsemi

File Size:

464.03 KB

Description:

N-Channel MOSFET

Features

* TrenchFET® Power MOSFET
* 100 % Rg and UIS Tested

Applications

* D
* OR-ing
* Server
* DC/DC G GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C

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