* TrenchFET® Power MOSFET
* 100 % Rg and UIS Tested
* Compliant to RoHS Directive 2011/65/EU APPLICATIONS D
* OR-ing
* Server
* DC/DC G GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol
NTD5806NT4G Datasheet (464.03 KB)
NTD5806NT4G
VBsemi
464.03 KB
N-channel mosfet.
NTD5806NT4G NTD5806NT4G N-Channel 4 www.VBsemi.com 0-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) () 0.013 at VGS = 10 V 0.018 at VGS = 4.5 .
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