* Trench power MOSFET
* Package with low thermal resistance
* 100 % Rg and UIS tested D Top View S D G G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Dr
P2N04L03 Datasheet (240.51 KB)
P2N04L03
VBsemi
240.51 KB
N-channel 40v mosfet.
P2N04L03-VB
P2N04L03-VB Datasheet N-Channel 40 V (D-S) 175 °C MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = 10 V ID (A) Configu.
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