* Trench Power MOSFET
* 150 °C Junction Temperature
* PWM Optimized
* 100 % Rg Tested
* Compliant to RoHS Directive 2002/95/EC APPLICATIONS
* Primary Side Switch G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted
SSD2504
VBsemi
247.64 KB
N-channel 100v mosfet.
SSD2504-VB SSD2504-VB Datasheet N-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.114 at VGS = 10 V ID (A) 1.
📁 Related Datasheet
SSD2504 N-Channel MOSFET (SeCoS)
SSD2504S N-Channel MOSFET (SeCoS)
SSD2531 21 Driving x 12 Sensing Capacitive Touch Panel Controller (SOLOMON SYSTECH)
SSD2532 16 Driving x 12 Sensing Capacitive Touch Panel Controller (SOLOMON SYSTECH)
SSD2533 23 Driving x 41 Sensing Capacitive Touch Panel Controller (SOLOMON SYSTECH)
SSD25N10 N-Ch Enhancement Mode Power MOSFET (SeCoS)
SSD25N10-C N-Ch Enhancement Mode Power MOSFET (SeCoS)
SSD2007A Dual N-CHANNEL POWER MOSFET (Fairchild Semiconductor)
SSD2009A Dual N-CHANNEL POWER MOSFET (Fairchild Semiconductor)
SSD2011A Dual P-CHANNEL POWER MOSFET (Fairchild Semiconductor)
