SSD25N10 N-Ch Enhancement Mode Power MOSFET

SeCoS

Description

Elektronische Bauelemente SSD25N10 25A , 100V , RDS(ON) 48mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies ha.
The SSD25N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most.

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Datasheet Specifications

Part number: SSD25N10
Manufacturer: SeCoS
File Size: 226.20 KB
Datasheet: SSD25N10-SeCoS.pdf
Description: N-Ch Enhancement Mode Power MOSFET

Features

* Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 25N10 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K 1 Gate Leader Size 13 inch 2 Drain 3 Source TO-252(D-Pack) A B C D GE K HF N O P M J REF. Millimeter Min. Max. REF.

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SSD25N10 N-Ch Enhancement Mode Power MOSFET SeCoS

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