Datasheet4U Logo Datasheet4U.com

SSD25N10 Datasheet - SeCoS

SSD25N10 N-Ch Enhancement Mode Power MOSFET

The SSD25N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications. The SSD25N10 meet the RoHS and Green Product requirement with full function reliability approved. FEAT.

SSD25N10 Features

* Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 25N10 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K 1 Gate Leader Size 13 inch 2 Drain 3 Source TO-252(D-Pack) A B C D GE K HF N O P M J REF. Millimeter Min. Max. REF.

SSD25N10 Datasheet (226.20 KB)

Preview of SSD25N10 PDF

Datasheet Details

Part number:

SSD25N10

Manufacturer:

SeCoS

File Size:

226.20 KB

Description:

N-ch enhancement mode power mosfet.

📁 Related Datasheet

SSD25N10-C N-Ch Enhancement Mode Power MOSFET (SeCoS)

SSD2504 N-Channel MOSFET (SeCoS)

SSD2504 N-Channel 100V MOSFET (VBsemi)

SSD2504S N-Channel MOSFET (SeCoS)

SSD2531 21 Driving x 12 Sensing Capacitive Touch Panel Controller (SOLOMON SYSTECH)

SSD2532 16 Driving x 12 Sensing Capacitive Touch Panel Controller (SOLOMON SYSTECH)

SSD2533 23 Driving x 41 Sensing Capacitive Touch Panel Controller (SOLOMON SYSTECH)

SSD2007A Dual N-CHANNEL POWER MOSFET (Fairchild Semiconductor)

SSD2009A Dual N-CHANNEL POWER MOSFET (Fairchild Semiconductor)

SSD2011A Dual P-CHANNEL POWER MOSFET (Fairchild Semiconductor)

TAGS

SSD25N10 N-Ch Enhancement Mode Power MOSFET SeCoS

Image Gallery

SSD25N10 Datasheet Preview Page 2 SSD25N10 Datasheet Preview Page 3

SSD25N10 Distributor