* Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 25N10 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K 1 Gate Leader Size 13 inch 2 Drain 3 Source TO-252(D-Pack) A B C D GE K HF N O P M J REF. Millimeter Min. Max. REF.
SSD25N10 Datasheet (226.20 KB)
SSD25N10
SeCoS
226.20 KB
N-ch enhancement mode power mosfet.
Elektronische Bauelemente
SSD25N10
25A , 100V , RDS(ON) 48mΩ N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies ha.
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