SSD25N10 Datasheet, Mosfet, SeCoS

SSD25N10 Features

• Mosfet Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 25N10 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K 1 Gate Leader Size

PDF File Details

Part number:

SSD25N10

Manufacturer:

SeCoS

File Size:

226.20kb

Download:

📄 Datasheet

Description:

N-ch enhancement mode power mosfet. The SSD25N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate

SSD25N10 Application

• Applications The SSD25N10 meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced high cell density

TAGS

SSD25N10

SeCoS

📁 Related Datasheet

SSD25N10-C - N-Ch Enhancement Mode Power MOSFET (SeCoS)
Elektronische Bauelemente SSD25N10-C 25A, 100V, RDS(ON) 48mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies ha.

SSD2504 - N-Channel MOSFET (SeCoS)
SSD2504 Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 5.0A, 100V, RDS(ON) 0.22Ω RoHS Compliant Product A suffix of “-C” specifies halog.

SSD2504S - N-Channel MOSFET (SeCoS)
Elektronische Bauelemente SSD2504S 5.4A , 100V , RDS(ON) 370mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies .

SSD2531 - 21 Driving x 12 Sensing Capacitive Touch Panel Controller (SOLOMON SYSTECH)
SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD2531 Product Preview 21 Driving x 12 Sensing Capacitive Touch Panel Controller This document contai.

SSD2532 - 16 Driving x 12 Sensing Capacitive Touch Panel Controller (SOLOMON SYSTECH)
SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD2532 Advance Information 16 Driving x 12 Sensing Capacitive Touch Panel Controller This document cont.

SSD2533 - 23 Driving x 41 Sensing Capacitive Touch Panel Controller (SOLOMON SYSTECH)
SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD2533 Advanced Information 23 Driving x 41 Sensing Capacitive Touch Panel Controller This document c.

SSD2007A - Dual N-CHANNEL POWER MOSFET (Fairchild Semiconductor)
Dual N-CHANNEL POWER MOSFET FEATURES ‰ Extremely Lower RDS(ON) ‰ Improved Inductive Ruggedness ‰ Fast Switching Times ‰ Rugged Polysilicon Gate Cell S.

SSD2009A - Dual N-CHANNEL POWER MOSFET (Fairchild Semiconductor)
Dual N-CHANNEL POWER MOSFET FEATURES Lower RDS(ON) Improved Inductive Ruggedness Fast Switching Times Low Input Capacitance Extended Safe Op.

SSD2011A - Dual P-CHANNEL POWER MOSFET (Fairchild Semiconductor)
Dual P-CHANNEL POWER MOSFET FEATURES Lower RDS(ON) Improved Inductive Ruggedness Fast Switching Times Low Input Capacitance Extended Safe Op.

SSD2019A - Dual P-Channel Power MOSFET (Fairchild Semiconductor)
Dual P-CHANNEL POWER MOSFET FEATURES Lower RDS(ON) Improved Inductive Ruggedness Fast Switching Times Low Input Capacitance Extended Safe Op.