SSD25N10-C N-Ch Enhancement Mode Power MOSFET

SeCoS

Description

Elektronische Bauelemente SSD25N10-C 25A, 100V, RDS(ON) 48mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies ha.
The SSD25N10-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(on) and gate charge for most.

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SSD25N10-C Datasheet Preview — Preview of SSD25N10-C PDF

Datasheet Specifications

Part number: SSD25N10-C
Manufacturer: SeCoS
File Size: 229.20 KB
Datasheet: SSD25N10-C-SeCoS.pdf
Description: N-Ch Enhancement Mode Power MOSFET

Features

* Advanced high cell density Trench technology
* Super Low Gate Charge
* Green Device Available MARKING 25N10   = Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch 2 ORDER INFORMATION Drain Part Number SSD25N10-C Type 1 Lead (Pb)-free and Halo

SSD25N10-C Distributors

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SSD25N10-C N-Ch Enhancement Mode Power MOSFET SeCoS

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