* Low RDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframce DPAK saves board space Fast switching speed High performance trench technology A B C D GE PRODUCT SUMMARY VDS(V) 60 PRODUCT SUMMARY RDS(on) m( 94 @VGS= 10V 109 @VGS
SSD20N06-90D Datasheet (462.61 KB)
SSD20N06-90D
SeCoS
462.61 KB
N-channel mosfet.
SSD20N06-90D
Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 19A, 60V, RDS(ON) 94 mΩ
RoHS Compliant Product A suffix of “-C” specifies ha.
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