SSD20N06-C Datasheet, Mosfet, SeCoS

SSD20N06-C Features

• Mosfet
• Advanced high cell density Trench technology
• Super Low Gate Charge
• Green Device Available MARKING 20N06   = Date Code PACKAGE INFORMATION Package

PDF File Details

Part number:

SSD20N06-C

Manufacturer:

SeCoS

File Size:

277.41kb

Download:

📄 Datasheet

Description:

N-ch enhancement mode power mosfet. The SSD20N06-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(on) and gat

SSD20N06-C Application

• Applications The SSD20N06-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES
• Advanced high

TAGS

SSD20N06-C

SeCoS

📁 Related Datasheet

SSD20N06-90D - N-Channel MOSFET (SeCoS)
SSD20N06-90D Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 19A, 60V, RDS(ON) 94 mΩ RoHS Compliant Product A suffix of “-C” specifies ha.

SSD20N06 - N-channel MOSFET (SeCoS)
Elektronische Bauelemente SSD20 06 20A , 60V , RDS(O ) 40mΩ -Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halo.

SSD20N03 - N-Ch Enhancement Mode Power MOSFET (SeCoS)
SSD20N03 Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 20 A, 30 V, RDS(ON) 52 mΩ RoHS Compliant Product A suffix of “-C” specifies halo.

SSD20N10-250D - N-Channel MOSFET (SeCoS)
SSD20N10-250D Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 11A, 100V, RDS(ON) 280mΩ RoHS Compliant Product A suffix of “-C” specifies .

SSD20N15 - N-CHANNEL MOSFET (SeCoS)
Elektronische Bauelemente SSD20N15 20A, 150V, RDS(ON) 70mΩ N-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen fr.

SSD20N15-250D - N-Channel MOSFET (SeCoS)
SSD20N15-250D Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 12A, 150V, RDS(ON) 255mΩ RoHS Compliant Product A suffix of “-C” specifies .

SSD2007A - Dual N-CHANNEL POWER MOSFET (Fairchild Semiconductor)
Dual N-CHANNEL POWER MOSFET FEATURES ‰ Extremely Lower RDS(ON) ‰ Improved Inductive Ruggedness ‰ Fast Switching Times ‰ Rugged Polysilicon Gate Cell S.

SSD2009A - Dual N-CHANNEL POWER MOSFET (Fairchild Semiconductor)
Dual N-CHANNEL POWER MOSFET FEATURES Lower RDS(ON) Improved Inductive Ruggedness Fast Switching Times Low Input Capacitance Extended Safe Op.

SSD2011A - Dual P-CHANNEL POWER MOSFET (Fairchild Semiconductor)
Dual P-CHANNEL POWER MOSFET FEATURES Lower RDS(ON) Improved Inductive Ruggedness Fast Switching Times Low Input Capacitance Extended Safe Op.

SSD2019A - Dual P-Channel Power MOSFET (Fairchild Semiconductor)
Dual P-CHANNEL POWER MOSFET FEATURES Lower RDS(ON) Improved Inductive Ruggedness Fast Switching Times Low Input Capacitance Extended Safe Op.