SSD20N06-C N-Ch Enhancement Mode Power MOSFET

SeCoS

Description

Elektronische Bauelemente SSD20N06-C 20A, 60V, RDS(ON) 43mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies hal.
The SSD20N06-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(on) and gate charge for most.

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SSD20N06-C Datasheet Preview — Preview of SSD20N06-C PDF

Datasheet Specifications

Part number: SSD20N06-C
Manufacturer: SeCoS
File Size: 277.41 KB
Datasheet: SSD20N06-C-SeCoS.pdf
Description: N-Ch Enhancement Mode Power MOSFET

Features

* Advanced high cell density Trench technology
* Super Low Gate Charge
* Green Device Available MARKING 20N06   = Date Code PACKAGE INFORMATION Package MPQ Leader Size TO-252 2.5K 13 inch 2 ORDER INFORMATION Drain Part Number Type 1 SSD20N06-C Lead (Pb)-free and Hal

SSD20N06-C Distributors

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SSD20N06-C N-Ch Enhancement Mode Power MOSFET SeCoS

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