* TrenchFET® Power MOSFET
* 175 °C Junction Temperature
* PWM Optimized
* 100 % Rg Tested
* Compliant to RoHS Directive 2002/95/EC APPLICATIONS
* Primary Side Switch G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise n
STD10NF10T4 Datasheet (374.46 KB)
STD10NF10T4
VBsemi
374.46 KB
N-channel mosfet.
STD10NF10T4 STD10NF10T4 Datasheet www.VBsemi.com N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.114 at VGS = 10 V ID (A.
📁 Related Datasheet
STD10NF10T4 N-CHANNEL POWER MOSFET (STMicroelectronics)
STD10NF10 N-CHANNEL POWER MOSFET (ST Microelectronics)
STD10NF10-1 N-CHANNEL POWER MOSFET (ST Microelectronics)
STD10NF06L N-CHANNEL POWER MOSFET (ST Microelectronics)
STD10NF30 N-CHANNEL POWER MOSFET (STMicroelectronics)
STD10N10 N-Channel MOSFET (SamHop Microelectronics)
STD10N20 N-Channel MOSFET (SamHop Microelectronics)
STD10N25 N-Channel MOSFET (SamHop Microelectronics)
STD10N60DM2 N-channel Power MOSFET (STMicroelectronics)
STD10N60M2 N-CHANNEL POWER MOSFET (STMicroelectronics)
