Datasheet Specifications
- Part number
- VBE2610N
- Manufacturer
- VBsemi
- File Size
- 209.61 KB
- Datasheet
- VBE2610N-VBsemi.pdf
- Description
- P-Channel MOSFET
Description
VBE2610N P-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 0.061 at V GS = - 10 V 0.072 at VGS = - 4.5 V ID.
Features
* TrenchFET® Power MOSFETApplications
* Load Switch TO-252 S G GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 100 °C ID - 30 - 25 Pulsed Drain Current IVBE2610N Distributors
📁 Related Datasheet
📌 All Tags