* TrenchFET® Power MOSFET
* 100 % UIS Tested APPLICATIONS
* Load Switch TO-252 S G GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ
VBE2610N Datasheet (209.61 KB)
VBE2610N
VBsemi
209.61 KB
P-channel mosfet.
VBE2610N P-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 0.061 at V GS = - 10 V 0.072 at VGS = - 4.5 V ID.
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