VBE2610N Datasheet - VBsemi

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VBE2610N P-Channel MOSFET

VBE2610N P-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 0.061 at V GS = - 10 V 0.072 at VGS = - 4.5 V ID.

VBE2610N-VBsemi.pdf

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Datasheet Details

Part number:

VBE2610N

Manufacturer:

VBsemi

File Size:

209.61 KB

Description:

P-Channel MOSFET

Features

* TrenchFET® Power MOSFET

Applications

* Load Switch TO-252 S G GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 100 °C ID - 30 - 25 Pulsed Drain Current I

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VBE2610N P-Channel MOSFET VBsemi

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