✔ VBE2205M Features
- Dynamic dV/dt rating
- Repetitive avalanche rated
- P-channel
- Fast switching
- Ease of paralleling
- Simple drive requirements
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Part number:
VBE2205M
Manufacturer:
VBsemi
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266.09kb
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📄 Datasheet
Description:
P-channel mosfet.
VBE2216 - P-Channel MOSFET
(VBsemi)
VBE2216
P-Channel 20-V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 20
0.016 at VGS = - 4.5 V
0.025 at VGS = - 2.5 V
ID .
VBE20 - Single Phase Rectifier Bridge
(IXYS)
Single Phase Rectifier Bridge
with Fast Recovery Epitaxial Diodes (FRED)
VBE 20
I = 20 A
dAV
VRRM = 2000 V trr = 70 ns
VRSM V
2000
VRRM V
2000
Typ.
VBE2345 - P-Channel MOSFET
(VBsemi)
VBE2345
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 30
0.035 at VGS = - 10 V
0.054 at VGS = - 4.5 V
ID (A)d - 38 - 20
Q.
VBE2412 - P-Channel MOSFET
(VBsemi)
VBE2412
.VBsemi.
P-Channel 4 0 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = -10 V RDS(on) () at VGS = -4.5 V ID (A) Configura.
VBE25R04 - P-Channel MOSFET
(VBsemi)
VBE25R04
.VBsemi.
P-Channel 500 V (D-S) Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
- 50.
VBE2605 - P-Channel MOSFET
(VBsemi)
VBE2605
P-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.004 at VGS = - 10 V - 60
0.010 at VGS = - 4.5 V
TO-252
ID (A) - 140d .
VBE2610N - P-Channel MOSFET
(VBsemi)
VBE2610N
P-Channel 60-V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 60
0.061 at V GS = - 10 V
0.072 at VGS = - 4.5 V
ID.
VBE2625 - P-Channel MOSFET
(VBsemi)
VBE2625
P-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.020 at VGS = - 10 V - 60
0.025 at VGS = - 4.5 V
ID (A) - 50 - 45
TO-2.
VBE2625A - P-Channel MOSFET
(VBsemi)
VBE2625A
P-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.020 at VGS = - 10 V - 60
0.025 at VGS = - 4.5 V
ID (A) - 50 - 45
TO-.
VBE2658 - P-Channel MOSFET
(VBsemi)
VBE2658
P-Channel 60 V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
- 60
0.046 at VGS = - 10 V
0.058 at VGS = - 4.5 V
ID (.
