* TrenchFET® power MOSFET
* Package with low thermal resistance
* 100 % Rg and UIS tested TO-252 S G GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drai
VBE2412
VBsemi
295.09 KB
P-channel mosfet.
VBE2412 www.VBsemi.com P-Channel 4 0 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = -10 V RDS(on) () at VGS = -4.5 V ID (A) Configura.
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