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VBE2102M Datasheet - VBsemi

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VBE2102M P-Channel 100V MOSFET

VBE2102M/VBFB2102M P-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 100 0.250 at VGS = - 10 V 0.280 at VGS = - .

VBE2102M-VBsemi.pdf

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Datasheet Details

Part number:

VBE2102M

Manufacturer:

VBsemi

File Size:

268.64 KB

Description:

P-Channel 100V MOSFET

Features

* Halogen-free According to IEC 61249-2-21 Definition
* Trench Power MOSFET
* 100 % Rg and UIS Tested

Applications

* Power Switch
* DC/DC Converters S GDS Top View GDS Top View Drain Connected to Tab G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS - 100 V VGS ± 20 Continuous D

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