VG26V18160CJ - CMOS DRAM
The device is CMOS Dynamic RAM organized as 1,048,576 words x 16 bits.
It is fabrionly or 3.3V only power supply.
Low voltage operation is more suitable to be used on battery VG26(V)(S)18160CJ 1,048,576 x 16 - Bit CMOS Dynamic RAM cated with an advanced submicron CMOS technology and designed to op
VG26V18160CJ Features
* Single 5V ( ± 10 %) or 3.3V (+10%,-5%) only power supply
* High speed tRAC access time : 50/60 ns
* Low power dissipation - Active mode : 5V version 605/550 mW (Max.) 3.3V version 396/360 mW (Max.) - Standby mode : 5V version 1.375 mW (Max.) 3.3V version 0.54 mW (Max.)
