VG26V17400E - CMOS Dynamic RAM
VG26(V)(S)17400E 4,194,304 x 4 - Bit CMOS Dynamic RAM The device is CMOS Dynamic RAM organized as 4,194,304 words x 4 bits.
It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only power supply.
Low voltage operation is more suitable to
VG26V17400E Features
* Single 5V (±10 %) or 3.3V (±10 %) only power supply
* High speed tRAC access time : 50/60 ns
* Low power dissipation - Active mode : 5V version 605/550 mW (Max.) 3.3V version 396/360 mW (Max.) - Standby mode : 5V version 1.375 mW (Max.) 3.3V version 0.54 mW (Max.)
