VG26V17400E, VG26V17400EJ-5 - CMOS Dynamic RAM

Vanguard International Semiconductor

VG26V17400E Datasheet Preview — This datasheet PDF includes multiple part numbers: VG26V17400E, VG26V17400EJ-5. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	VG26V17400E, VG26V17400EJ-5
Manufacturer	Vanguard InterNational Semiconductor ↗
File Size	209.13 KB
Description	CMOS Dynamic RAM
Datasheet	VG26V17400EJ-5_VanguardInternationalSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: VG26V17400E, VG26V17400EJ-5. Please refer to the document for exact specifications by model.

VG26V17400E Product details

Description

VG26(V)(S)17400E 4,194,304 x 4 - Bit CMOS Dynamic RAM The device is CMOS Dynamic RAM organized as 4,194,304 words x 4 bits.It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only power supply.Low voltage operation is more suitable to be used on battery backup, portable electronic application.A new refresh feature called “ self-refresh “ is supported and very slow CBR cycles are being performed.It is packaged in JEDEC standard 2

Features

Single 5V (±10 %) or 3.3V (±10 %) only power supply.
High speed tRAC access time : 50/60 ns.
Low power dissipation - Active mode : 5V version 605/550 mW (Max. ) 3.3V version 396/360 mW (Max. ) - Standby mode : 5V version 1.375 mW (Max. ) 3.3V version 0.54 mW (Max. ).
Fast Page Mode access.
I/O level : TTL compatible (Vcc = 5V) LVTTL compatible (Vcc = 3.3V).
2048 refresh cycles in 32 ms (Std) or 128ms (S - version.

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Other Datasheets by Vanguard International Semiconductor

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VG26V17400FJ - CMOS DRAM
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VG26VS17400E - 4/194/304 x 4 - Bit CMOS Dynamic RAM
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Published: Dec 20, 2017 |