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VG2618160CJ CMOS DRAM

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Description

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The device is CMOS Dynamic RAM organized as 1,048,576 words x 16 bits.

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Features

* Single 5V ( ± 10 %) or 3.3V (+10%,-5%) only power supply
* High speed tRAC access time : 50/60 ns
* Low power dissipation - Active mode : 5V version 605/550 mW (Max. ) 3.3V version 396/360 mW (Max. ) - Standby mode : 5V version 1.375 mW (Max. ) 3.3V version 0.54 mW (Max. )

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