VG2617405FJ

CMOS DRAM

Vanguard International Semiconductor

VG2617405FJ Features

* Single 5V( ± 10 %) or 3.3V(+10%,-5%) only power supply

* High speed tRAC acess time: 50/60ns

* Low power dissipation - Active wode : 5V version 660/605 mW (Mas) 3.3V version 432/396 mW (Mas) - Standby mode: 5V version 1.375 mW (Mas) 3.3V version 0.54 mW (Mas)

* Exte

VG2617405FJ General Description

VG26(V)(S)17405FJ 4,194,304 x 4 - Bit CMOS Dynamic RAM The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V oniy power supply. Low volt.

VG2617405FJ Datasheet (549.54 KB)

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VG2617405FJ

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Vanguard International Semiconductor

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549.54 KB

Description:

Cmos dram.

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VG2617405FJ CMOS DRAM Vanguard International Semiconductor

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VG2617405FJ Features

VG2617405FJ General Description

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