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VG26S17400FJ, VG2617400FJ Datasheet - Vanguard International Semiconductor

VG26S17400FJ CMOS DRAM

or 3.3V only power supply. Low voltage operation is more suitable to be used on battery VG26(V)(S)17400FJ 4,194,304 x 4 - Bit CMOS Dynamic RAM The device is CMOS Dynamic RAM organized as 4,194,304 words x 4 bits. It is fabricated with an advanced submicron CMOS technology and designed to operate f.

VG26S17400FJ Features

* Single 5V ( ± 10 %) or 3.3V (+10%,-5%) only power supply

* High speed tRAC access time : 50/60 ns

* Low power dissipation - Active mode : 5V version 605/550 mW (Max.) 3.3V version 396/360 mW (Max.) - Standby mode : 5V version 1.375 mW (Max.) 3.3V version 0.54 mW (Max.)

VG2617400FJ_VanguardInternationalSemiconductor.pdf

This datasheet PDF includes multiple part numbers: VG26S17400FJ, VG2617400FJ. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

VG26S17400FJ, VG2617400FJ

Manufacturer:

Vanguard International Semiconductor

File Size:

514.57 KB

Description:

Cmos dram.

Note:

This datasheet PDF includes multiple part numbers: VG26S17400FJ, VG2617400FJ.
Please refer to the document for exact specifications by model.

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