VG26S17405FJ, VG2617405FJ - CMOS DRAM

Vanguard International Semiconductor

VG26S17405FJ Datasheet Preview — This datasheet PDF includes multiple part numbers: VG26S17405FJ, VG2617405FJ. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	VG26S17405FJ, VG2617405FJ
Manufacturer	Vanguard InterNational Semiconductor ↗
File Size	549.54 KB
Description	CMOS DRAM
Datasheet	VG2617405FJ_VanguardInternationalSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: VG26S17405FJ, VG2617405FJ. Please refer to the document for exact specifications by model.

VG26S17405FJ Product details

Description

VG26(V)(S)17405FJ 4,194,304 x 4 - Bit CMOS Dynamic RAM The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode.It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V oniy power supply.Low voltage operation is more suitable to be used on battery backup, portable electronic application.A new refresh feature called “self-refresh” is supported and very slow CBR cycles are being performed.lt

Features

Single 5V( ± 10 %) or 3.3V(+10%,-5%) only power supply.
High speed tRAC acess time: 50/60ns.
Low power dissipation - Active wode : 5V version 660/605 mW (Mas) 3.3V version 432/396 mW (Mas) - Standby mode: 5V version 1.375 mW (Mas) 3.3V version 0.54 mW (Mas).
Extended - data - out(EDO) page mode access.
I/O level: TTL compatible (Vcc = 5V) LVTTL compatible (Vcc = 3.3V) DataSheet4U. com.
2048 refresh cycle in 32 ms(Std. ) or 128 ms(S-version).

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Published: Sep 12, 2006 |