VG26S17400E

CMOS Dynamic RAM

Vanguard International Semiconductor

VG26S17400E Features

* Single 5V (±10 %) or 3.3V (±10 %) only power supply

* High speed tRAC access time : 50/60 ns

* Low power dissipation - Active mode : 5V version 605/550 mW (Max.) 3.3V version 396/360 mW (Max.) - Standby mode : 5V version 1.375 mW (Max.) 3.3V version 0.54 mW (Max.)

VG26S17400E General Description

VG26(V)(S)17400E 4,194,304 x 4 - Bit CMOS Dynamic RAM The device is CMOS Dynamic RAM organized as 4,194,304 words x 4 bits. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only power supply. Low voltage operation is more suitable to.

VG26S17400E Datasheet (209.13 KB)

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VG26S17400E

Manufacturer:

Vanguard International Semiconductor

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209.13 KB

Description:

Cmos dynamic ram.

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VG26S17400E CMOS Dynamic RAM Vanguard International Semiconductor

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VG26S17400E Features

VG26S17400E General Description

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