VG26S18165D, VG2618165D - CMOS DRAM

Vanguard Microelectronics Limited

VG26S18165D Datasheet Preview — This datasheet PDF includes multiple part numbers: VG26S18165D, VG2618165D. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	VG26S18165D, VG2618165D
Manufacturer	Vanguard Microelectronics Limited
File Size	554.63 KB
Description	CMOS DRAM
Datasheet	VG2618165D_VanguardMicroelectronicsLimited.pdf
Note	This datasheet PDF includes multiple part numbers: VG26S18165D, VG2618165D. Please refer to the document for exact specifications by model.

VG26S18165D Product details

Description

VG26(V)(S)18165C/VG26(V)(S)18165D 1,048,576 x 16 - Bit CMOS Dynamic RAM The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode.It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only power supply.Low voltage operation is more suitable to be used on battery backup, portable electronic application.Selfrefresh is supported and CBR cycles are being performed.lt is packaged in JEDEC sta

Features

Single 5V or 3.3V only power supply.
High speed tRAC access time: 50/60ns.
Extended-data-out (EDO) page mode access.
I/O level: TTL compatible (Vcc = 5V) LVTTL compatible (Vcc = 3.3V).
4 refresh modes: - RAS only refresh - CAS - before - RAS refresh - Hidden refresh - Self-refresh.
Refresh interval: - RAS only refresh, CAS - before - RAS refresh and hidden refresh: 1024 cycles in 16 ms - Self-refresh: 1024 cycles.
JEDEC standard pi.

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Published: Sep 12, 2006 |